Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Combined laser and atomic force microscope lithography on aluminum: Mask fabrication for nanoelectromechanical systems

Electron beam lithography for advanced LSI fabrication

The current technology used in IC (Integrated Circuit) and LSI (Large Scale Integration) fabrication is based on optical lithography or the art of photocopying. The light wave length sets an ultimate and absolute limit on the resolution of the optical method at about one micron (JLm=10-6 meter) and the current LSI technology has almost reached this limit. In microscopy, a drastic improvement of...

Electron Beam Lithography for the Fabrication of Future Device Demonstrators

Multi-gate transistors are considered to be the ultimate device concept for use in future CMOS generations. The so-called FinFET [1] is a variant with a straightforward process flow [2]. A three-dimensional sketch of the FinFET can be seen in Fig.1. The small channels benefit from superior electrostatic channel control, resulting in enhanced turn-off behavior. However, its fabrication demands e...

Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots

SEP 2 7 2011 . RARIES B.S., Electrical Engineering, University of Sao Paulo (2008) ARCHIVES Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of Master of Science in Electrical Engineering and Computer Science at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY September 2011 ( 2011 Massachusetts Institute of Technology...

Resolution limits of electron-beam lithography toward the atomic scale.

We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss...